metal oxide
美 
英
- n.金屬氧化物
- 網絡金屬氧化物膜電阻；金屬氧化物電阻；金屬氧化物薄膜電晶體
英漢解釋
例句
The invention provides a resistivity switching metal oxide or nitride layer capable of reaching at least two stable resistivity states.
本發明提供一種可達到至少兩個穩定的電阻率狀態的電阻率切換金屬氧化物或氮化物層。
Thermite is aluminum powder and a metal oxide which produces an aluminothermic reaction known as a thermite reaction.
鋁熱是鋁粉，一種金屬氧化劑，能產生我們所謂的鋁熱反應。
In addition, it was found that the metal oxide could be repeatedly used up to 5 cycles without any significant loss in its surface activity.
經測試后顯示，研究中所使用的金屬氧化物可重復使用五次，且金屬的表面活性并不會被降低。
Recently, transition metal oxide catalysts used for oxidation of CO and hydrocarbons at low temperature have attracted much attention.
目前，非貴金屬類的過渡金屬氧化物催化劑用于CO和烴類的低溫氧化受到了廣泛關注。
These tiny semiconductors inject electrons into a metal oxide film, or "sensitize" it, to increase solar energy conversion.
這些微小的半導體把電子注入到金屬氧化物薄膜中，或者說把它“敏化”，從而增強太陽能轉換。
The metal oxide particles are preferably incorporated into the emulsion in the form of an aqueous dispersion.
金屬氧化物顆粒優選以含水分散體的形式加入到乳液中。
and a metal oxide layer, the metal oxide layer being formed between the channel layer and the source and the drain.
以及金屬氧化物層，該金屬氧化物層在該溝道層與該源極和該漏極之間形成。
The invention relates to a manufacture method of a trench type metal-oxide semiconductor device.
一種溝道式金屬氧化物半導體元件的制作方法，其特征在于包括：提供一基板；
The germanium oxide layer and the metal oxide layer are converted into a first dielectric layer.
將半導體氧化層與金屬氧化物層轉化成一第一介電層。
Provided is a complementary metal oxide semiconductor (CMOS) device and a method of manufacturing the same.
本發明提供了一種互補金屬氧化物半導體（CMOS）裝置及其制造方法。
The metal oxide semiconductor field effect transistor (MOSFET) works on a similar principle, but the diode is buried within the MOSFET.
在金屬氧化物半導體場效應晶體管（MOSFET）的作品在一個類似的原則，但二極管的MOSFET內掩埋。
The advantages, parameters, selection and installation of the metal-oxide arrester for composite transformers are introduced.
介紹了金屬氧化物避雷器的優點、要參數及其配套于組合式變壓器的選用原則和安裝方式。
Inanother embodiment, the at least one metal compound is a metal oxide compound.
在另一實施方案中，至少一種金屬化合物是金屬氧化物化合物。
The metal-oxide-semiconductor ( MOS ) structure is the basis work for the complementary metal-oxide-semiconductor (CMOS) technology.
金氧半結構是一種存在于CMOS（互補式金氧半導體）制程中的基本的型式。
the catalyst is composed of transition metal oxide and rare earth oxide, so the cost of the catalyst is low.
催化劑以過渡金屬氧化物和稀土氧化物構成，催化劑成本低。
They studied the pressure dependence of electrical properties of metal-oxide semiconductor in a separate paper.
他們在另一篇文章中給出關于金屬氧化物半導體電學特性對壓強的依賴關系的研究結果。
The metal oxide layer acts as a protecting layer to prevent deterioration of the phosphor due to ion bombardment.
該金屬氧化物層起保護層的作用，以防止因離子轟擊而破壞該磷光體。
The bonding properties of the metal-oxygen bridge accurately determined the reaction rates between metal-oxide and water.
金屬與氧之間的鍵的性質決定了它們（金屬氧化物）與水之間反應速率。
The system comprises metal -oxide-covered (SnO2) micro-hot plates and the necessary driving and signal-conditioning circuitry.
該系統包括金屬氧化物覆蓋（二氧化錫）微型熱板、必要的驅動器及信號調節電路。
Bipolar (Si and SiGe), metal oxide semiconductor (MOS), and compound semiconductor technologies are discussed.
雙極（硅鍺），金屬氧化物半導體（MOS），及化合物半導體技術進行了討論。
As the metal oxide, molybdenum oxide, vanadium oxide, ruthenium oxide, rhenium oxide, and the like are preferably used.
作為金屬氧化物，優選使用氧化鉬、氧化釩、氧化釕、氧化錸等。
The invention is a method for producing a metal oxide catalyst useful for purifying exhaust gases and waste gases from combustion processes.
本發明是可用于純化來自燃燒工藝的尾氣和廢氣的金屬氧化物催化劑的制備方法。
Both doping and quantum dot sensitization extend the visible light absorption of the metal oxide materials.
摻雜和量子點敏化都增強了金屬氧化物材料對可見光的吸收。
The present invention brings forward a method for determining leakage currents in integrated circuit and metal oxide semiconductor element.
本發明提出一種集成電路及金屬氧化物半導體元件中判斷漏電流的方法。
The catalyst consists of transition metal oxide loaded onto active carbon, alumina, silica, diatomite or molecular sieve.
催化劑組成為過渡金屬氧化物負載于活性炭，氧化鋁，氧化硅，硅藻土及分子篩上。
Removal of metal-oxide layers formed on stainless and carbon steel surfaces by excimer laser irradiation in various atmospheres.
在各種氣體中用激發物激光輻照去除不銹鋼和碳鋼表面形成的金屬氧化物層…[中國核科技信息與經濟研究院]。
Preparation of slurry is the basal and crucial process when fabricating metal oxide gas sensors using screen-printing method.
漿料的制備是采用絲網印刷工藝制備金屬氧化物半導體氣敏傳感器過程中的關鍵。
Through the gas absorption on the metal oxide surface, gas concentration change is measured.
通過氣體吸附在金屬氧化物半導體的表面，測定半導體電傳導度的變化反映氣體濃度。
It introduce the detecting method of metal-oxide surge arresters in service, detector and fault identification method.
介紹了金屬氧化物避雷器各種帶電檢測方法、檢測儀器以及避雷器故障的判定方法。
Heavy duty Silver Metal Oxide composition contacts ensure long electrical endurance .
銀金屬氧化物觸點實現高的電壽命次數。
Synthesizing the metal-oxide nanoparticle with physical method and chemical method is studied.
著重從物理方法和化學方法兩個方面介紹金屬氧化物納米顆粒的合成；
It was shown that rare-earth metal oxide effi-cientely improve the structure and wear resistance of laser strengthened area.
研究表明，稀土金屬氧化物能夠顯著改善激光強化區的組織和耐磨性能。
This paper suggests a new method to measure the resistance leakage current wirelessly for metal-oxide surge arrester.
提出了一種測量金屬氧化物避雷器阻性泄漏電流無線檢測的新方法，該方法包括發送和接收兩個裝置。
The author analysed the dynamic characteristics and the simulation model building of metal oxide arrester(MOA).
在雷電沖擊下，對金屬氧化物避雷器的動態特性和仿真計算中等效模型的建立進行了分析。
The sorption agent has an integral type self-supporting metal oxide framework, high specific surface area and even aperture distribution.
該吸附劑具有整體式自支撐金屬氧化物骨架結構，比表面積高且孔徑分布均勻。
Mixed metal oxide(MMO) coated titanium anode was prepared by thermal decomposition process.
采用熱分解方法制備了混合金屬氧化物（MMO）涂層鈦陽極。
metal-oxide surge arrester; testing instrument; standard device.
金屬氧化物避雷器；測試儀；標準裝置。
Surge arresters - Part 4 : metal-oxide surge arresters without gaps for a. c. systems.
避雷器.第4部分：交流電系統用無間隙金屬氧化物避雷器
Mixed gate metal-oxide-semiconductor transistors are provided.
本發明提供了混合柵極的金屬氧化物半導體晶體管。
Several studies have suggested that a metal-oxide surface may be viewd as a collection of clusters of different sizes and isomers.
研究表明金屬氧化物表面是具有不同尺寸和形態的簇合物的近似集合體。
